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| PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 BASE 1 3 EM ITTER SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 40 75 6.0 600 1.5 150 -65 to +150 Unit Vdc Vdc Vdc Adc W C C Device Marking PZT2222A=GT2222A ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=10 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 Adc, IC=0) Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE =-3.0Vdc) Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc) Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO IBEX ICEX IEBO Min 40 75 6.0 Max 20 10 100 Unit Vdc Vdc Vdc nAdc nAdc nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw PZT2222A ELECTRICALCHARACTERISTICS- Continued C harac teris tic (T A = 25 C unless otherwise noted) S ymbol Min Max Unit OFF CHARACTERISTICS (continued) Collector-Base Cutof f Current (V CB = 60 Vdc, I E = 0) (V C B = 60 Vdc, I E = 0, TA = 125 C) I CBO 10 10 nAdc uAdc ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc, TA = - 55 C) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltages (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltages (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Input Impedance 5 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Output Admittance 5 (V CE = 10 Vdc, I C= 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C= 10 mAdc, f = 1.0 kHz) Noise Figure (V CE = 10 Vdc, I C = 100 uAdc, f = 1.0 kHz) h FE 35 50 70 35 100 50 40 V BE( sat) 0.6 2.0 0.25 h fe 50 75 5.0 25 300 0.3 1.0 1.2 2.0 8.0 1.25 8.0x10-4 4.0x10-4 300 375 35 200 4.0 Vdc V CE(sat) Vdc 5h ie 5 k h re - - 5h oe 5 umhos F dB DYNAMICCHARACTERISTICS Current-Gain- Bandwidth Product (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) fT Cc Ce 300 8.0 25 MHz pF pF SWITCHINGTIMES (T A = 25 C) Delay Time Rise Time Storage Time Fall Time (V CC = 30 Vdc, I C = 150 mAdc, I B(on) = 15 mAdc, V EB( of f) = 0 .5Vdc) Figure 1 (V CC = 30 Vdc, I C = 150 mAdc, I B(on ) = IB( off) = 15 mAdc) ff) Figure 2 td tr ts tf 10 25 225 60 ns ns WEITRON http://www.weitron.com.tw PZT2222A Vi 90% R1 Vi R2 Vo D.U.T. VCC 0 tr tp 10% FIG.1 Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = - 0.5 V to +9.9 V , VCC = +30 V, R1 = 619 PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR tp tr d < < = 200 ns 2 ns 0.02 , R2 = 200 . OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACIT ANCE RISE TIME Zi Ci tr > 100 k < 12 pF < 5 ns Vi +16.2 V VCC R2 D.U.T. R3 Vo OSCILLOSCOPE R4 tf 100 ms VBB R1 0 TIME Vi D1 - 13.8 V FIG.2 Input Waveform and Test Circuit for Determining Storage Time and Fall Time WEITRON http://www.weitron.com.tw PZT2222A SOT-223 Outline Dimensions unit:mm A F DIM MILLIMETERS MIN MAX 4 S 1 2 3 B D L G C H M K J A B C D F G H J K L M S 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw |
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